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NTP30N06L, NTB30N06L
2800
2400
2000
V DS = 0 V
C iss
V GS = 0 V
T J = 25 ° C
6
5
4
Q 1
Q T
Q 2
1600
3
V GS
1200
800
C rss
C iss
2
400
C oss
C rss
1
I D = 30 A
T J = 25 ° C
0
10
5 V GS 0 V DS 5
10
15
20
25
0
0
4
8
12
16
20
1000
100
GATE?TO?SOURCE OR DRAIN?TO?SOURCE VOLTAGE
(VOLTS)
Figure 7. Capacitance Variation
t r
t f
32
24
16
Q g , TOTAL GATE CHARGE (nC)
Figure 8. Gate?to?Source and
Drain?to?Source Voltage versus Total Charge
V GS = 0 V
T J = 25 ° C
10
t d(off)
t d(on)
V DS = 30 V
I D = 30 A
V GS = 5 V
8
1
1
10
100
0
0.6
0.68
0.76
0.84
0.92
1
1.08
R G , GATE RESISTANCE ( W )
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
V SD , SOURCE?TO?DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus
Current
1000
100
T C = 25 ° C
T J = 175 ° C
SINGLE PULSE
120
100
I D = 26 A
80
10
10 ms
60
1
1 ms
R DS(on) Limit
Thermal Limit
100 m s
10 m s
dc
40
20
Package Limit
0.1
0.1
1
10
100
0
25
50
75
100
125
150
175
V DS , DRAIN?TO?SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
T J , STARTING JUNCTION TEMPERATURE ( ° C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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